First EDS system with a computer based multi-channel analyzer

First EDS to use a time variant pulse processor, which attained levels of resolution and spectrum stability at high count rates that exceeded the theoretical expectations of the time

Queen’s Award – first detector to see Boron on electron microscope

Developed crystal conditioner circuit for in situ detector de-icing for optimal light element performance

Developed PentaFET® – first charge reset FET to replace optical FETs and generate significant reduction in resolution of all Si(Li) detectors for EDS

First EDS detector to detect Be with the introduction of the PentaFET® detector

First system to achieve acquisition rates in excess of 30,000 cps acquisition rate into spectrum

First EDS detector to be fully computer controlled for parameter optimization on installation

First digitally controlled time-variant pulse processor – XP2

First pulse processor to use computer control for automatic calibration

R&D 100 Award 1990 – X-ray spectrometer with improved sensitivity using new design of FET (PentaFET®)

First EDS detector to guarantee 115eV resolution at Mn with the introduction of the Link GEM HpGe detector

First EDS detector to guarantee 65eV resolution at F with the introduction of the Link GEM HpGe detector

First pulse processor with digital processing and high rate zero strobe – DXP50

First EDS system to use IEEE 1394 architecture

First EDS hardware to guarantee best resolution at 2,500 cps with the introduction of the INCAx-sight detector and INCAx-stream pulse processor

First EDS hardware to guarantee stability of output between 1,000 and 10,000cps to less than 1eV with the introduction of the INCAx-sight detector and INCAx-stream pulse processor